Jakse,, N., Arifin,, R. and Lai, S.K. (2011) Growth of graphene on 6H–SiC by molecular dynamics simulation. Condensed Matter Physics, 14 (4). pp. 1-7.
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Abstract
Classical molecular-dynamics simulations were carried out to study epitaxial growth of graphene on 6H–SiC(0001) substrate. It was found that there exists a threshold annealing temperature above which we observe formation of graphitic structure on the substrate. To check the sensitivity of the simulation results, we tested two empirical potentials and evaluated their reliability by the calculated characteristics of graphene, its carbon-carbon bond-length, pair correlation function, and binding energy. Key words: graphene, epitaxial growth, molecular dynamics
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Engineering > Department of Informatic Engineering |
| Depositing User: | Library Umpo |
| Date Deposited: | 28 Jan 2016 02:42 |
| Last Modified: | 28 Jan 2016 02:42 |
| URI: | http://eprints.umpo.ac.id/id/eprint/1723 |
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